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Width: 1.2 mm
Height: 0.6 mm
Length: 1.66 mm
Technology: Si
Unit Weight: 32 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 750 pC, 1.7 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 280 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 15 ns, 20 ns
Typical Turn-Off Delay Time: 20 ns, 35 ns
Id - Continuous Drain Current: 500 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 200 mS, 100 mS
Rds On - Drain-Source Resistance: 1.4 Ohms, 4 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1 V
