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Width: 1.65 mm
Height: 1.1 mm
Length: 3.05 mm
Fall Time: 35 ns
Rise Time: 30 ns
Technology: Si
Unit Weight: 20 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 90 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 4.2 W
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Typical Turn-On Delay Time: 25 ns
Typical Turn-Off Delay Time: 65 ns
Id - Continuous Drain Current: 8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 30 S
Rds On - Drain-Source Resistance: 17.5 mOhms
Vds - Drain-Source Breakdown Voltage: 12 V
Vgs th - Gate-Source Threshold Voltage: 1 V
