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Width: 1.65 mm
Height: 1.1 mm
Length: 3.05 mm
Technology: Si
Unit Weight: 85 mg
Channel Mode: Enhancement
Configuration: Dual
Mounting Style: SMD/SMT
Qg - Gate Charge: 4.2 nC, 5.6 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 3.1 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Id - Continuous Drain Current: 4 A, 3.7 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 55 mOhms, 150 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 600 mV, 1.5 V
