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Fall Time: 10 ns
Rise Time: 5 ns, 13 ns
Technology: Si
Unit Weight: 1 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel TrenchFET Power MOSFET
Qg - Gate Charge: 53 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 52 W
Vgs - Gate-Source Voltage: - 8 V, + 12 V
Typical Turn-On Delay Time: 20 ns
Typical Turn-Off Delay Time: 40 ns
Id - Continuous Drain Current: 162 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 60 S
Rds On - Drain-Source Resistance: 1.1 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
