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Fall Time: 8 ns, 14 ns
Rise Time: 15 ns, 16 ns
Technology: Si
Unit Weight: 20 mg
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel, 1 P-Channel
Qg - Gate Charge: 2.5 nC, 3.5 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 1.67 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 9 ns, 7 ns
Typical Turn-Off Delay Time: 22 ns, 29 ns
Id - Continuous Drain Current: 3.57 A, 2.5 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 10 S, 3 S
Rds On - Drain-Source Resistance: 49 mOhms, 140 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 600 mV, 1.5 V
