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Fall Time: 2.2 ns, 2.2 ns
Rise Time: 2.4 ns, 2.4 ns
Technology: Si
Unit Weight: 20 mg
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 2 P-Channel
Qg - Gate Charge: 12.2 nC
Number of Channels: 2 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 1.67 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 6.6 ns, 6.6 ns
Typical Turn-Off Delay Time: 18.4 ns, 18.4 ns
Id - Continuous Drain Current: 3 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 4.2 S, 4.2 S
Rds On - Drain-Source Resistance: 85 mOhms, 85 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
