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Fall Time: 10 ns
Rise Time: 22 ns
Technology: Si
Mounting Style: SMD/SMT
Qg - Gate Charge: 15.7 nC
Transistor Polarity: P-Channel
Pd - Power Dissipation: 13.6 W
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Typical Turn-On Delay Time: 16 ns
Typical Turn-Off Delay Time: 29 ns
Id - Continuous Drain Current: 9 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 20 S
Rds On - Drain-Source Resistance: 1 mOhms, 25 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.3 V
