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Vishay General Semiconductor SQJA76EP-T1_GE3 MOSFETs 40V Vds; +/-20V Vgs PowerPAK SO-8L

Name: Vishay General Semiconductor SQJA76EP-T1_GE3 MOSFETs 40V Vds; +/-20V Vgs PowerPAK SO-8L
Brand: Vishay General Semiconductor

ModelSQJA76EP-T1_GE3

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Fall Time: 8 ns

Rise Time: 17 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Qg - Gate Charge: 100 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 68 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 32 ns

Id - Continuous Drain Current: 75 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 48 S

Rds On - Drain-Source Resistance: 2.4 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V