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Width: 9.65 mm
Height: 4.83 mm
Length: 10.67 mm
Fall Time: 200 ns
Rise Time: 100 ns
Technology: Si
Unit Weight: 4 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 190 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 375 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 20 ns
Typical Turn-Off Delay Time: 120 ns
Id - Continuous Drain Current: 120 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 60 S
Rds On - Drain-Source Resistance: 8.1 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
