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Width: 1.6 mm
Height: 0.65 mm
Length: 1.6 mm
Fall Time: 7 ns
Rise Time: 15 ns
Technology: Si
Unit Weight: 45.104 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 4.3 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 900 mW
Vgs - Gate-Source Voltage: - 5 V, + 5 V
Typical Turn-On Delay Time: 5 ns
Typical Turn-Off Delay Time: 22 ns
Id - Continuous Drain Current: 3.5 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 13 S
Rds On - Drain-Source Resistance: 54 mOhms
Vds - Drain-Source Breakdown Voltage: 8 V
Vgs th - Gate-Source Threshold Voltage: 350 mV
