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Width: 9.65 mm
Height: 4.83 mm
Length: 10.67 mm
Fall Time: 69 ns
Rise Time: 84 ns
Technology: Si
Unit Weight: 4 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 81 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 250 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 24 ns
Typical Turn-Off Delay Time: 70 ns
Id - Continuous Drain Current: 24 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 145 mOhms
Vds - Drain-Source Breakdown Voltage: 700 V
Vgs th - Gate-Source Threshold Voltage: 4 V
