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Fall Time: 10 ns
Rise Time: 28 ns, 45 ns
Technology: Si
Unit Weight: 143.050 mg
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 9.5 nC, 17.8 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 16.7 W, 31 W
Vgs - Gate-Source Voltage: - 12 V, + 16 V
Typical Turn-On Delay Time: 8 ns, 12 ns
Typical Turn-Off Delay Time: 15 ns, 20 ns
Id - Continuous Drain Current: 30 A, 40 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 45 S, 68 S
Rds On - Drain-Source Resistance: 4.24 mOhms, 8.3 mOhms
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs th - Gate-Source Threshold Voltage: 2.4 V
