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Fall Time: 4.9 ns, 13.5 ns
Rise Time: 9.3 ns, 9.5 ns
Technology: Si
Unit Weight: 506.600 mg
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 2 N-Channel
Qg - Gate Charge: 20 nC, 48 nC
Number of Channels: 2 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 48 W, 43 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 4.8 ns, 7.7 ns
Typical Turn-Off Delay Time: 15.6 ns, 47 ns
Id - Continuous Drain Current: 15 A, 18 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 64 S, 102 S
Rds On - Drain-Source Resistance: 13.3 mOhms, 5.3 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 1.5 V
