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Vishay Siliconix SQJQ936EL-T1_GE3 MOSFETs Automotive Dual N-Channel 40 V (D-S) 175C MOSFET PowerPAK 8 x 8L, 2.3 m a. 10V, 2.7 m a. 4.5V

Name: Vishay Siliconix SQJQ936EL-T1_GE3 MOSFETs Automotive Dual N-Channel 40 V (D-S) 175C MOSFET PowerPAK 8 x 8L, 2.3 m a. 10V, 2.7 m a. 4.5V
Brand: Vishay Siliconix

ManufacturerVishay Siliconix(View more products from this manufacturer)

ModelSQJQ936EL-T1_GE3

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Fall Time: 14 ns

Rise Time: 16 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 98 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 75 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 120 S

Rds On - Drain-Source Resistance: 2.3 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V