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Fall Time: 8 ns
Rise Time: 13 ns
Technology: SiC
Channel Mode: Enhancement
REACH - SVHC: Details
Mounting Style: SMD/SMT
Qg - Gate Charge: 111 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 326 W
Vgs - Gate-Source Voltage: - 8 V, + 19 V
Typical Turn-On Delay Time: 10 ns
Typical Turn-Off Delay Time: 26 ns
Id - Continuous Drain Current: 77 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 24 S
Rds On - Drain-Source Resistance: 25 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 2.3 V
